inchange semiconductor isc product specification isc silicon npn power transistor MJ3771 description low collector-emitter saturation voltage- vce(sat)=1v(max)@ic=15a low leakage - icbo=1ma(max)@50v high current-gain-bandwidth product- f t =2mhz(min)@ic=1a applications designed for power amplifier and switching applications. for ultimate circuit per formance based on the de sign requirements. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-base voltage 50 v v ebo emitter-base voltage 5 v i c collector current-continuous 30 a i b b base current-continuous 7.5 a p c collector power dissipation@t c =25 200 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ3771 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b = 0 40 v v ce (sat)-1 collector-emitter saturation voltage i c =15a; i b = 1.5a 1 v v ce (sat)-2 collector-emitter saturation voltage i c = 30a; i b =6a 4 v v be (on) base-emitter on voltage i c =15a; v ce =4v 1.7 v i cex collector cutoff current v ce =50v; v be(off) =1.5v v ce =30v; v be(off) =1.5v, tc=150 1 2 ma i cbo collector cutoff current v ce =50v; i e = 0 1 ma i ceo collector cutoff current v ce =30v; i c = 0 2 ma i ebo emitter cutoff current v eb =5v; i c = 0 1 ma h fe-1 dc current gain i c =15a; v ce =4v 15 60 h fe-2 dc current gain i c =30a; v ce =4v 5 f t current-gain-bandwidth product i c =1a; v ce =4v; f test =1mhz 2 mhz isc website www.iscsemi.cn
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